maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 6.0 v collector current i c 30 ma power dissipation (one die) p d 300 mw power dissipation (both die) p d 500 mw power dissipation (one die, t c =25c) p d 750 mw power dissipation (both die, t c =25c) p d 1500 mw operating and storage junction temperature t j ,t stg -65 to +200 c electrical characteristics per transistor: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =45v 2.0 na i ceo v ce =5.0v 2.0 na i ebo v eb =5.0v 2.0 na bv cbo i c =10a 60 v bv ceo i c =10ma 60 v bv ebo i e =10a 6.0 v v ce(sat) i c =1.0ma, i b =0.1ma 0.35 v v be(on) v ce =5.0v, i c =100a 0.70 v h fe v ce =5.0v, i c =10a 150 600 h fe v ce =5.0v, i c =10a, t a = -55c 40 h fe v ce =5.0v, i c =100a 225 h fe v ce =5.0v, i c =1.0ma 300 f t v ce =5.0v, i c =500a, f=20mhz 60 mhz 2N2920 npn silicon dual transistors jedec to-78 case central semiconductor corp. tm r0 (22-february 2007) description: the central semiconductor 2N2920 is a silicon npn dual transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.
central semiconductor corp. tm jedec to-78 case - mechanical outline 2N2920 npn silicon dual transistors r0 (22-february 2007) electrical characteristics per transistor (continued): (t a =25c unless otherwise noted) symbol test conditions min max units c ob v cb =5.0v, i e =0, f=140khz 6.0 pf nf v ce =5.0v, i c =10a, r s =10k ? 3.0 db f=1.0khz, bw=200hz matching characteristics: symbol test conditions min max units h fe1 /h fe2 *v ce =5.0v, i c =100a 0.9 1.0 |v be1 -v be2 |v ce =5.0v, i c =10a 5.0 mv |v be1 -v be2 |v ce =5.0v, i c =100a 3.0 mv |v be1 -v be2 |v ce =5.0v, i c =1.0ma 5.0 mv ? (v be1 -v be2 )v ce =5.0v, i c =100a, t a = -55c to +25c 0.8 mv ? (v be1 -v be2 )v ce =5.0v, i c =100a, t a = +25c to +125c 1.0 mv * the lowest h fe reading is taken as h fe1
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